Справочник MOSFET. FDI3632

 

FDI3632 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDI3632
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 310 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 84 nC
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
   Тип корпуса: TO262 I2PAK

 Аналог (замена) для FDI3632

 

 

FDI3632 Datasheet (PDF)

 ..1. Size:656K  fairchild semi
 fdb3632 fdp3632 fdi3632 fdh3632.pdf

FDI3632 FDI3632

December 2008FDB3632 / FDP3632 / FDI3632 / FDH3632N-Channel PowerTrench MOSFET100V, 80A, 9mFeatures Applications rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A DC/DC converters and Off-Line UPS Qg(tot) = 84nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode Hi

 ..2. Size:282K  inchange semiconductor
 fdi3632.pdf

FDI3632 FDI3632

isc N-Channel MOSFET Transistor FDI3632FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpose

 9.1. Size:260K  fairchild semi
 fdi3652.pdf

FDI3632 FDI3632

October 2003FDB3652 / FDP3652 / FDI3652N-Channel PowerTrench MOSFET100V, 61A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

 9.2. Size:263K  fairchild semi
 fdb3652 fdp3652 fdi3652.pdf

FDI3632 FDI3632

October 2003FDB3652 / FDP3652 / FDI3652N-Channel PowerTrench MOSFET100V, 61A, 16mFeatures Applications rDS(ON) = 14m (Typ.), VGS = 10V, ID = 61A DC/DC Converters and Off-line UPS Qg(tot) = 41nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Syn

 9.3. Size:282K  inchange semiconductor
 fdi3652.pdf

FDI3632 FDI3632

isc N-Channel MOSFET Transistor FDI36352FEATURESDrain Current I = 61A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 16m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power su pplies and generalpurpo

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