UT4404G-S08-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UT4404G-S08-R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.8 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 8.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.4 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 3.5 nS
Conductancia de drenaje-sustrato (Cd): 97 pF
Resistencia entre drenaje y fuente RDS(on): 0.024 Ohm
Paquete / Cubierta: SOP8
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UT4404G-S08-R Datasheet (PDF)
ut4404g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4404 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4404 provide excellent RDS (ON), low gate charge and operation with gate voltages as low as 2.5V by using advanced trench technology. The UTC UT4404 is suitable for use in PWM applications and as a load switch. Separating the source leads is to SOP-8allow a Kelvin connecti
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