UT4404G-S08-R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: UT4404G-S08-R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.4 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 3.5 nS
   Cossⓘ - Capacitancia de salida: 97 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: SOP8

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UT4404G-S08-R Datasheet (PDF)

..1. Size:245K utc
ut4404g-s08-r.pdf

UNISONIC TECHNOLOGIES CO., LTD UT4404 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4404 provide excellent RDS (ON), low gate charge and operation with gate voltages as low as 2.5V by using advanced trench technology. The UTC UT4404 is suitable for use in PWM applications and as a load switch. Separating the source leads is to SOP-8allow a Kelvin connecti

9.1. Size:343K central
cmut4403.pdf

CMUT4401 NPNCMUT4403 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORSCMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications.MARKIN

9.2. Size:343K central
cmut4401.pdf

9.3. Size:201K utc
ut4406.pdf

UNISONIC TECHNOLOGIES CO., LTD UT4406 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTCs SOP-8advanced trench technology which makes an excellent high side switch for notebook CPU core DC-DC conversion. FEATURES * RDS(ON)

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