UT4404G-S08-R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UT4404G-S08-R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 97 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm

Encapsulados: SOP8

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UT4404G-S08-R datasheet

 ..1. Size:245K  utc
 ut4404g-s08-r.pdf pdf_icon

UT4404G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT4404 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4404 provide excellent RDS (ON), low gate charge and operation with gate voltages as low as 2.5V by using advanced trench technology. The UTC UT4404 is suitable for use in PWM applications and as a load switch. Separating the source leads is to SOP-8 allow a Kelvin connecti

 9.1. Size:343K  central
 cmut4403.pdf pdf_icon

UT4404G-S08-R

CMUT4401 NPN CMUT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORS CMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKIN

 9.2. Size:343K  central
 cmut4401.pdf pdf_icon

UT4404G-S08-R

CMUT4401 NPN CMUT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORS CMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKIN

 9.3. Size:201K  utc
 ut4406.pdf pdf_icon

UT4404G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT4406 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTC s SOP-8 advanced trench technology which makes an excellent high side switch for notebook CPU core DC-DC conversion. FEATURES * RDS(ON)

MOSTRAR MÁS

Otros transistores... UT3N10L-AE3-R, UT3N10G-AE3-R, UT3N10L-AG6-R, UT3N10G-AG6-R, UT3N10L-TN3-R, UT3N10G-TN3-R, UT3N10L-K08-3030-R, UT3N10G-K08-3030-R, 18N50, UT4421G-S08-R, UT60N03L-TA3-T, UT60N03G-TA3-T, UT60N03L-TM3-T, UT60N03G-TM3-T, UT60N03L-TN3-R, UT60N03G-TN3-R, UT60N03L-TND-R