All MOSFET. UT4404G-S08-R Datasheet

 

UT4404G-S08-R MOSFET. Datasheet pdf. Equivalent


   Type Designator: UT4404G-S08-R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
   |Id|ⓘ - Maximum Drain Current: 8.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10 nC
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOP8

 UT4404G-S08-R Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

UT4404G-S08-R Datasheet (PDF)

 ..1. Size:245K  utc
 ut4404g-s08-r.pdf

UT4404G-S08-R UT4404G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT4404 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4404 provide excellent RDS (ON), low gate charge and operation with gate voltages as low as 2.5V by using advanced trench technology. The UTC UT4404 is suitable for use in PWM applications and as a load switch. Separating the source leads is to SOP-8allow a Kelvin connecti

 9.1. Size:343K  central
 cmut4403.pdf

UT4404G-S08-R UT4404G-S08-R

CMUT4401 NPNCMUT4403 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORSCMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications.MARKIN

 9.2. Size:343K  central
 cmut4401.pdf

UT4404G-S08-R UT4404G-S08-R

CMUT4401 NPNCMUT4403 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORSCMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications.MARKIN

 9.3. Size:201K  utc
 ut4406.pdf

UT4404G-S08-R UT4404G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT4406 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTCs SOP-8advanced trench technology which makes an excellent high side switch for notebook CPU core DC-DC conversion. FEATURES * RDS(ON)

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: AP4500GM

 

 
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