UT4404G-S08-R Specs and Replacement

Type Designator: UT4404G-S08-R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V

Qg ⓘ - Total Gate Charge: 10 nC

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOP8

UT4404G-S08-R substitution

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UT4404G-S08-R datasheet

 ..1. Size:245K  utc
 ut4404g-s08-r.pdf pdf_icon

UT4404G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT4404 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4404 provide excellent RDS (ON), low gate charge and operation with gate voltages as low as 2.5V by using advanced trench technology. The UTC UT4404 is suitable for use in PWM applications and as a load switch. Separating the source leads is to SOP-8 allow a Kelvin connecti... See More ⇒

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UT4404G-S08-R

CMUT4401 NPN CMUT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORS CMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKIN... See More ⇒

 9.2. Size:343K  central
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UT4404G-S08-R

CMUT4401 NPN CMUT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORS CMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKIN... See More ⇒

 9.3. Size:201K  utc
 ut4406.pdf pdf_icon

UT4404G-S08-R

UNISONIC TECHNOLOGIES CO., LTD UT4406 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTC s SOP-8 advanced trench technology which makes an excellent high side switch for notebook CPU core DC-DC conversion. FEATURES * RDS(ON) ... See More ⇒

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Detailed specifications: UT3N10L-AE3-R, UT3N10G-AE3-R, UT3N10L-AG6-R, UT3N10G-AG6-R, UT3N10L-TN3-R, UT3N10G-TN3-R, UT3N10L-K08-3030-R, UT3N10G-K08-3030-R, 18N50, UT4421G-S08-R, UT60N03L-TA3-T, UT60N03G-TA3-T, UT60N03L-TM3-T, UT60N03G-TM3-T, UT60N03L-TN3-R, UT60N03G-TN3-R, UT60N03L-TND-R

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