UT4404G-S08-R. Аналоги и основные параметры
Наименование производителя: UT4404G-S08-R
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.8 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 3.5 ns
Cossⓘ - Выходная емкость: 97 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
Тип корпуса: SOP8
Аналог (замена) для UT4404G-S08-R
- подборⓘ MOSFET транзистора по параметрам
UT4404G-S08-R даташит
ut4404g-s08-r.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4404 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTC UT4404 provide excellent RDS (ON), low gate charge and operation with gate voltages as low as 2.5V by using advanced trench technology. The UTC UT4404 is suitable for use in PWM applications and as a load switch. Separating the source leads is to SOP-8 allow a Kelvin connecti
cmut4403.pdf
CMUT4401 NPN CMUT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORS CMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKIN
cmut4401.pdf
CMUT4401 NPN CMUT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORS CMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKIN
ut4406.pdf
UNISONIC TECHNOLOGIES CO., LTD UT4406 Power MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4406 can provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V by using UTC s SOP-8 advanced trench technology which makes an excellent high side switch for notebook CPU core DC-DC conversion. FEATURES * RDS(ON)
Другие IGBT... UT3N10L-AE3-R, UT3N10G-AE3-R, UT3N10L-AG6-R, UT3N10G-AG6-R, UT3N10L-TN3-R, UT3N10G-TN3-R, UT3N10L-K08-3030-R, UT3N10G-K08-3030-R, 18N50, UT4421G-S08-R, UT60N03L-TA3-T, UT60N03G-TA3-T, UT60N03L-TM3-T, UT60N03G-TM3-T, UT60N03L-TN3-R, UT60N03G-TN3-R, UT60N03L-TND-R
History: STP180N10F3
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