HM100N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM100N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 1350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de HM100N03 MOSFET
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HM100N03 datasheet
hm100n03.pdf
HM100N03 N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n03k.pdf
HM100N03K N-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n03d.pdf
HM100N03D Description The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n02k.pdf
Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)
Otros transistores... S70N08S , S70N08RN , S70N08RP , STP200N3LL , BSS84KR , HM0565 , HM100N02 , HM100N02K , 8N60 , HM100N03D , HM100N03K , HM100N06F , HM100N15 , HM100N15A , HM100N20T , HM100P03 , HM100P03K .
History: FTK8N65DD | IRLZ40 | BSB053N03LPG | FTK8N65P | IRLZ34N | IRLZ34NS
History: FTK8N65DD | IRLZ40 | BSB053N03LPG | FTK8N65P | IRLZ34N | IRLZ34NS
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