HM100N03 - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM100N03
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 100 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 1350 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: TO220
Аналог (замена) для HM100N03
HM100N03 Datasheet (PDF)
hm100n03.pdf

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n03k.pdf

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n03d.pdf

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)
hm100n02k.pdf

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)
Другие MOSFET... S70N08S , S70N08RN , S70N08RP , STP200N3LL , BSS84KR , HM0565 , HM100N02 , HM100N02K , IRFB31N20D , HM100N03D , HM100N03K , HM100N06F , HM100N15 , HM100N15A , HM100N20T , HM100P03 , HM100P03K .
History: SWP6N70DA | STD14NM50N | AP2309AGN | VP2320N1 | SI4559ADY | MCU80N06A | SI1016X
History: SWP6N70DA | STD14NM50N | AP2309AGN | VP2320N1 | SI4559ADY | MCU80N06A | SI1016X



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