All MOSFET. HM100N03 Datasheet

 

HM100N03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM100N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 1350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220

 HM100N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM100N03 Datasheet (PDF)

 ..1. Size:704K  cn hmsemi
 hm100n03.pdf

HM100N03 HM100N03

HM100N03N-Channel Enhancement Mode Power MOSFET Description The HM100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 0.1. Size:759K  cn hmsemi
 hm100n03k.pdf

HM100N03 HM100N03

HM100N03KN-Channel Enhancement Mode Power MOSFET Description The HM100N03K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 0.2. Size:428K  cn hmsemi
 hm100n03d.pdf

HM100N03 HM100N03

HM100N03DDescription The HM100N03D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =100A RDS(ON)

 7.1. Size:544K  cn hmsemi
 hm100n02k.pdf

HM100N03 HM100N03

Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

 7.2. Size:426K  cn hmsemi
 hm100n06f.pdf

HM100N03 HM100N03

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature VDS =60V,ID =100A RDS(ON)

 7.3. Size:772K  cn hmsemi
 hm100n02.pdf

HM100N03 HM100N03

HM100N02Description The HM100N02 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =100A RDS(ON)

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
Back to Top