HM120N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM120N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 1350 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de HM120N03 MOSFET
HM120N03 Datasheet (PDF)
hm120n03.pdf

HM120N03N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
hm120n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
hm120n04.pdf

HM120N04N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)
hm120n04k.pdf

HM120N04KN-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
Otros transistores... HM10N60F , HM10N70F , HM10N80A , HM10N80F , HM10P10D , HM10P10Q , HM110N03D , HM1207E , IRFZ44N , HM120N03K , HM120N04 , HM120N04D , HM120N04I , HM120N04K , HM12N15I , HM12N20D , HM12N60 .
History: IPD031N03L
History: IPD031N03L



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