HM120N03. Аналоги и основные параметры
Наименование производителя: HM120N03
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 10 ns
Cossⓘ - Выходная емкость: 1350 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0035 Ohm
Тип корпуса: TO220
Аналог (замена) для HM120N03
- подборⓘ MOSFET транзистора по параметрам
HM120N03 даташит
hm120n03.pdf
HM120N03 N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
hm120n03k.pdf
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
hm120n04.pdf
HM120N04 N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)
hm120n04k.pdf
HM120N04K N-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
Другие MOSFET... HM10N60F , HM10N70F , HM10N80A , HM10N80F , HM10P10D , HM10P10Q , HM110N03D , HM1207E , IRFZ44N , HM120N03K , HM120N04 , HM120N04D , HM120N04I , HM120N04K , HM12N15I , HM12N20D , HM12N60 .
History: HM1207E | G08N03D2
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Список транзисторов
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