HM120N03 Datasheet and Replacement
Type Designator: HM120N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 1350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
HM120N03 substitution
HM120N03 Datasheet (PDF)
hm120n03.pdf

HM120N03N-Channel Enhancement Mode Power MOSFET Description The HM120N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
hm120n03k.pdf

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =120A RDS(ON)
hm120n04.pdf

HM120N04N-Channel Enhancement Mode Power MOSFET Description The HM120N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A Schematic diagram RDS(ON)
hm120n04k.pdf

HM120N04KN-Channel Enhancement Mode Power MOSFET Description The HM120N04K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =120A RDS(ON)
Datasheet: HM10N60F , HM10N70F , HM10N80A , HM10N80F , HM10P10D , HM10P10Q , HM110N03D , HM1207E , IRFZ44N , HM120N03K , HM120N04 , HM120N04D , HM120N04I , HM120N04K , HM12N15I , HM12N20D , HM12N60 .
History: BSP317P | WMK030N06HG4 | RU6H1L | HM20N06 | SDF460JEA | STD2NK90Z | SI2343CDS
Keywords - HM120N03 MOSFET datasheet
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History: BSP317P | WMK030N06HG4 | RU6H1L | HM20N06 | SDF460JEA | STD2NK90Z | SI2343CDS



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