HM1404B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM1404B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 260 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 800 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de HM1404B MOSFET
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HM1404B datasheet
hm1404b.pdf
40VDS 20VGS 130A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=40V VGSS= 20V ID=130A RDS(ON)=4m (max.)@VGS=10V High Dense Cell Design Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Power Management in
hm1404c.pdf
HM1404C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =170A RDS(ON)
hm1404.pdf
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)
hm1404d.pdf
HM1404D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON)
Otros transistores... HM12N60F , HM12N65 , HM12N65F , HM13N50 , HM13N50F , HM13P10 , HM13P10K , HM1404 , IRFB4227 , HM1404C , HM1404D , HM150N03 , HM150N03D , HM150N03K , HM15N02Q , HM15N10D , HM15N10K .
History: DMP2004VK | SSI65R360S2 | AP3P010H
History: DMP2004VK | SSI65R360S2 | AP3P010H
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