HM1404B Specs and Replacement
Type Designator: HM1404B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 260 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
HM1404B substitution
- MOSFET ⓘ Cross-Reference Search
HM1404B datasheet
hm1404b.pdf
40VDS 20VGS 130A(ID) N-Channel Enha ncement Mode MOSFET Features Pin Description VDSS=40V VGSS= 20V ID=130A RDS(ON)=4m (max.)@VGS=10V High Dense Cell Design Reliable and Rugged Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Applications Power Management in ... See More ⇒
hm1404c.pdf
HM1404C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =170A RDS(ON) ... See More ⇒
hm1404.pdf
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON) ... See More ⇒
hm1404d.pdf
HM1404D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 40V,ID =200A RDS(ON) ... See More ⇒
Detailed specifications: HM12N60F, HM12N65, HM12N65F, HM13N50, HM13N50F, HM13P10, HM13P10K, HM1404, IRFB4227, HM1404C, HM1404D, HM150N03, HM150N03D, HM150N03K, HM15N02Q, HM15N10D, HM15N10K
Keywords - HM1404B MOSFET specs
HM1404B cross reference
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