HM180N02 Todos los transistores

 

HM180N02 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM180N02
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 185 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: TO220
 

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HM180N02 Datasheet (PDF)

 ..1. Size:601K  cn hmsemi
 hm180n02.pdf pdf_icon

HM180N02

HM180N02N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 0.1. Size:803K  cn hmsemi
 hm180n02d.pdf pdf_icon

HM180N02

HM180N02DN-Channel Enhancement Mode Power MOSFET Description The HM180N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 0.2. Size:991K  cn hmsemi
 hm180n02k.pdf pdf_icon

HM180N02

HM180N02KN-Channel Enhancement Mode Power MOSFET Description The HM180N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

Otros transistores... HM1607D , HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D , HM17N10K , AON7410 , HM180N02D , HM180N02K , HM18DN03Q , HM18N03D , HM18N40 , HM18N40A , HM18N40F , HM18N50A .

History: SE60120B | BSO203SPH | TK45S06K3L | AP2308GE | BSF077N06NT3G | BSC020N03MSG | WMP80R1K0S

 

 
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