HM180N02 Datasheet and Replacement
Type Designator: HM180N02
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 185 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 1200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: TO220
HM180N02 substitution
HM180N02 Datasheet (PDF)
hm180n02.pdf

HM180N02N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)
hm180n02d.pdf

HM180N02DN-Channel Enhancement Mode Power MOSFET Description The HM180N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)
hm180n02k.pdf

HM180N02KN-Channel Enhancement Mode Power MOSFET Description The HM180N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)
Datasheet: HM1607D , HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D , HM17N10K , AON7410 , HM180N02D , HM180N02K , HM18DN03Q , HM18N03D , HM18N40 , HM18N40A , HM18N40F , HM18N50A .
History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G
Keywords - HM180N02 MOSFET datasheet
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History: FDZ375P | STL70N10F3 | 2SK538 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G



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