All MOSFET. HM180N02 Datasheet

 

HM180N02 Datasheet and Replacement


   Type Designator: HM180N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 185 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 1200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: TO220
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HM180N02 Datasheet (PDF)

 ..1. Size:601K  cn hmsemi
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HM180N02

HM180N02N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 0.1. Size:803K  cn hmsemi
hm180n02d.pdf pdf_icon

HM180N02

HM180N02DN-Channel Enhancement Mode Power MOSFET Description The HM180N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 0.2. Size:991K  cn hmsemi
hm180n02k.pdf pdf_icon

HM180N02

HM180N02KN-Channel Enhancement Mode Power MOSFET Description The HM180N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BUZ50B-220SM | NCE30P12BS | NP180N04TUJ | SSW65R190S2 | SRT10N160LD | SM4186T9RL | APT10021JFLL

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