HM180N02D Todos los transistores

 

HM180N02D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM180N02D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 185 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 1200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
   Paquete / Cubierta: TO263
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HM180N02D Datasheet (PDF)

 ..1. Size:803K  cn hmsemi
 hm180n02d.pdf pdf_icon

HM180N02D

HM180N02DN-Channel Enhancement Mode Power MOSFET Description The HM180N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 6.1. Size:991K  cn hmsemi
 hm180n02k.pdf pdf_icon

HM180N02D

HM180N02KN-Channel Enhancement Mode Power MOSFET Description The HM180N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 6.2. Size:601K  cn hmsemi
 hm180n02.pdf pdf_icon

HM180N02D

HM180N02N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HM3205B | FDB6690S | SIHP22N65E | HM25P04K | PDN2309S | RUH1H130S | 2SK2907-01

 

 
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