HM180N02D Todos los transistores

 

HM180N02D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HM180N02D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 185 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 1200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TO263

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HM180N02D datasheet

 ..1. Size:803K  cn hmsemi
 hm180n02d.pdf pdf_icon

HM180N02D

HM180N02D N-Channel Enhancement Mode Power MOSFET Description The HM180N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 6.1. Size:991K  cn hmsemi
 hm180n02k.pdf pdf_icon

HM180N02D

HM180N02K N-Channel Enhancement Mode Power MOSFET Description The HM180N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

 6.2. Size:601K  cn hmsemi
 hm180n02.pdf pdf_icon

HM180N02D

HM180N02 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON)

Otros transistores... HM16N02D , HM16N50 , HM16N50F , HM16N60F , HM16N65F , HM16P12D , HM17N10K , HM180N02 , SPP20N60C3 , HM180N02K , HM18DN03Q , HM18N03D , HM18N40 , HM18N40A , HM18N40F , HM18N50A , HM18N50F .

History: DMP4015SSS | 2SK1736

 

 

 

 

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