HM180N02D PDF and Equivalents Search

 

HM180N02D Specs and Replacement

Type Designator: HM180N02D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 185 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V

Qg ⓘ - Total Gate Charge: 70 nC

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm

Package: TO263

HM180N02D substitution

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HM180N02D datasheet

 ..1. Size:803K  cn hmsemi
 hm180n02d.pdf pdf_icon

HM180N02D

HM180N02D N-Channel Enhancement Mode Power MOSFET Description The HM180N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON) ... See More ⇒

 6.1. Size:991K  cn hmsemi
 hm180n02k.pdf pdf_icon

HM180N02D

HM180N02K N-Channel Enhancement Mode Power MOSFET Description The HM180N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON) ... See More ⇒

 6.2. Size:601K  cn hmsemi
 hm180n02.pdf pdf_icon

HM180N02D

HM180N02 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =185A RDS(ON) ... See More ⇒

Detailed specifications: HM16N02D, HM16N50, HM16N50F, HM16N60F, HM16N65F, HM16P12D, HM17N10K, HM180N02, SPP20N60C3, HM180N02K, HM18DN03Q, HM18N03D, HM18N40, HM18N40A, HM18N40F, HM18N50A, HM18N50F

Keywords - HM180N02D MOSFET specs

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