FDMA530PZ Todos los transistores

 

FDMA530PZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMA530PZ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 6.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: MICROFET
 

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FDMA530PZ datasheet

 ..1. Size:787K  fairchild semi
 fdma530pz.pdf pdf_icon

FDMA530PZ

June 2011 tm FDMA530PZ Single P-Channel PowerTrench MOSFET 30V, 6.8A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0A applications . It features a MOSFET with low on-st

 ..2. Size:314K  onsemi
 fdma530pz.pdf pdf_icon

FDMA530PZ

MOSFET - Power, Single P-Channel, POWERTRENCH) -30 V, -6.8 A, 35 mW FDMA530PZ General Description This device is designed specifically for battery charge or load www.onsemi.com switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance. The WDFN6 (MicroFET 2 2) package offers exceptional thermal Bottom Drain Contact perfo

 9.1. Size:283K  fairchild semi
 fdma520pz.pdf pdf_icon

FDMA530PZ

April 2009 FDMA520PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.3A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5A It features a MOSFET with low o

 9.2. Size:302K  fairchild semi
 fdma507pz.pdf pdf_icon

FDMA530PZ

May 2010 FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 m Features General Description This device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 A It features a MOSFET with low on-stade resist

MOSTRAR MÁS

Otros transistores... STS3401A , FDMA410NZ , FDMA420NZ , FDMA430NZ , STS3401 , FDMA507PZ , FDMA510PZ , FDMA520PZ , 12N60 , FDMA6023PZT , FDMA7630 , STS3400 , FDMA7632 , STS3116E , FDMA7670 , STS2622A , FDMA7672 .

 

 

 


 
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