FDMA530PZ datasheet, аналоги, основные параметры

Наименование производителя: FDMA530PZ  📄📄 

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 2.4 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm

Тип корпуса: MICROFET

  📄📄 Копировать ⓘ

Аналог (замена) для FDMA530PZ

- подборⓘ MOSFET транзистора по параметрам

 

FDMA530PZ даташит

 ..1. Size:787K  fairchild semi
 fdma530pz.pdf pdf_icon

FDMA530PZ

June 2011 tm FDMA530PZ Single P-Channel PowerTrench MOSFET 30V, 6.8A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0A applications . It features a MOSFET with low on-st

 ..2. Size:314K  onsemi
 fdma530pz.pdf pdf_icon

FDMA530PZ

MOSFET - Power, Single P-Channel, POWERTRENCH) -30 V, -6.8 A, 35 mW FDMA530PZ General Description This device is designed specifically for battery charge or load www.onsemi.com switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance. The WDFN6 (MicroFET 2 2) package offers exceptional thermal Bottom Drain Contact perfo

 9.1. Size:283K  fairchild semi
 fdma520pz.pdf pdf_icon

FDMA530PZ

April 2009 FDMA520PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.3A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5A It features a MOSFET with low o

 9.2. Size:302K  fairchild semi
 fdma507pz.pdf pdf_icon

FDMA530PZ

May 2010 FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 m Features General Description This device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 A It features a MOSFET with low on-stade resist

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... STS3401A, FDMA410NZ, FDMA420NZ, FDMA430NZ, STS3401, FDMA507PZ, FDMA510PZ, FDMA520PZ, 12N60, FDMA6023PZT, FDMA7630, STS3400, FDMA7632, STS3116E, FDMA7670, STS2622A, FDMA7672