FDMA530PZ Datasheet and Replacement. Cross Reference Search

FDMA530PZ Datasheet (PDF)

..1. Size:787K fairchild semi
fdma530pz.pdf pdf_icon

June 2011tmFDMA530PZSingle P-Channel PowerTrench MOSFET 30V, 6.8A, 35mFeatures General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0Aapplications . It features a MOSFET with low on-st

..2. Size:314K onsemi
fdma530pz.pdf pdf_icon

MOSFET - Power, SingleP-Channel, POWERTRENCH)-30 V, -6.8 A, 35 mWFDMA530PZGeneral DescriptionThis device is designed specifically for battery charge or loadwww.onsemi.comswitching in cellular handset and other ultraportable applications . Itfeatures a MOSFET with low on-state resistance.The WDFN6 (MicroFET 2 2) package offers exceptional thermalBottom Drain Contactperfo

9.1. Size:283K fairchild semi
fdma520pz.pdf pdf_icon

April 2009FDMA520PZtmSingle P-Channel PowerTrench MOSFET 20V, 7.3A, 30mFeatures General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3AThis device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5AIt features a MOSFET with low o

9.2. Size:302K fairchild semi
fdma507pz.pdf pdf_icon

May 2010FDMA507PZSingle P-Channel PowerTrench MOSFET-20 V, -7.8 A, 24 mFeatures General DescriptionThis device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 Aswitching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 AIt features a MOSFET with low on-stade resist