FDMA530PZ Datasheet. Specs and Replacement

Type Designator: FDMA530PZ  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 6.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: MICROFET

FDMA530PZ substitution

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FDMA530PZ datasheet

 ..1. Size:787K  fairchild semi
fdma530pz.pdf pdf_icon

FDMA530PZ

June 2011 tm FDMA530PZ Single P-Channel PowerTrench MOSFET 30V, 6.8A, 35m Features General Description Max rDS(on) = 35m at VGS = 10V, ID = 6.8A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable Max rDS(on) = 65m at VGS = 4.5V, ID = 5.0A applications . It features a MOSFET with low on-st... See More ⇒

 ..2. Size:314K  onsemi
fdma530pz.pdf pdf_icon

FDMA530PZ

MOSFET - Power, Single P-Channel, POWERTRENCH) -30 V, -6.8 A, 35 mW FDMA530PZ General Description This device is designed specifically for battery charge or load www.onsemi.com switching in cellular handset and other ultraportable applications . It features a MOSFET with low on-state resistance. The WDFN6 (MicroFET 2 2) package offers exceptional thermal Bottom Drain Contact perfo... See More ⇒

 9.1. Size:283K  fairchild semi
fdma520pz.pdf pdf_icon

FDMA530PZ

April 2009 FDMA520PZ tm Single P-Channel PowerTrench MOSFET 20V, 7.3A, 30m Features General Description Max rDS(on) = 30m at VGS = 4.5V, ID = 7.3A This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. Max rDS(on) = 53m at VGS = 2.5V, ID = 5.5A It features a MOSFET with low o... See More ⇒

 9.2. Size:302K  fairchild semi
fdma507pz.pdf pdf_icon

FDMA530PZ

May 2010 FDMA507PZ Single P-Channel PowerTrench MOSFET -20 V, -7.8 A, 24 m Features General Description This device is designed specifically for battery charge or load Max rDS(on) = 24 m at VGS = -5 V, ID = -7.8 A switching in cellular handset and other ultraportable applications. Max rDS(on) = 25 m at VGS = -4.5 V, ID = -7 A It features a MOSFET with low on-stade resist... See More ⇒

Detailed specifications: STS3401A, FDMA410NZ, FDMA420NZ, FDMA430NZ, STS3401, FDMA507PZ, FDMA510PZ, FDMA520PZ, 12N60, FDMA6023PZT, FDMA7630, STS3400, FDMA7632, STS3116E, FDMA7670, STS2622A, FDMA7672

Keywords - FDMA530PZ MOSFET specs

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