HM2306 Todos los transistores

 ..1. Size:355K  cn hmsemi
 hm2306.pdf

HM2306 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2306 uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Battery protection or in other Switching application. S GENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

 9.1. Size:219K  chenmko
 chm2304gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2304GP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

 9.2. Size:132K  chenmko
 chm2301esgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2301ESGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 Ampere APPLICATION * Po rtable * High speed switch FEATURE SOT-23 * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON) * Suitable for high packing density. * Rugged and reliable. (1) * High saturation current capabili

 9.3. Size:178K  chenmko
 chm2308esgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2308ESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High s

 9.4. Size:85K  chenmko
 chm2307gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2307GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High sat

 9.5. Size:97K  chenmko
 chm2305gp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM2305GP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-59/SOT-346 FEATURE * Small flat package. (SC-59 ) * High density cell design for extremely low RDS(ON). * Rugged and reliable. (2) * High satur

 9.6. Size:1768K  cn vbsemi
 hm2301kr.pdf

HM2301KR www.VBsemi.tw P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)c Qg (Typ.) Definition 0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET 4.3 nC - 20 0.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch DC/DC Convert

 9.7. Size:1649K  cn vbsemi
 hm2305pr.pdf

HM2305PR www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.056 at VGS = - 4.5 V - 6.0 APPLICATIONS Load Switch Battery Switch D S G G D S D P-Channel MOSFET ABS

 9.8. Size:1890K  cn vbsemi
 hm2300.pdf

HM2300 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Convert

 9.9. Size:572K  cn hmsemi
 hm2301a.pdf

HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.10. Size:652K  cn hmsemi
 hm2301c.pdf

HM2301 P-Channel Trench Power MOSFET General Description The HM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application. Features Schematic Diagram VDS = -12V,ID =-2. A R

 9.11. Size:512K  cn hmsemi
 hm2305b.pdf

HM2305B P-Channel Enhancement Mode Power MOSFET Description D The HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -12V,ID = -4.1A RDS(ON)

 9.12. Size:873K  cn hmsemi
 hm2309.pdf

HM2309 P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 215m @VGS=-10V The HM2309 is the P-Channel logic enhancement mode power RDS(ON) 260m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Ex

 9.13. Size:534K  cn hmsemi
 hm2301.pdf

HM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.14. Size:1133K  cn hmsemi
 hm2301bkr.pdf

HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BKR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

 9.15. Size:418K  cn hmsemi
 hm2302.pdf

HM2302 N-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D 3 RDS(ON)

 9.16. Size:644K  cn hmsemi
 hm2300d.pdf

HM2300D N-Channel Enhancement Mode Power MOSFET Description D The HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

 9.17. Size:567K  cn hmsemi
 hm2300b.pdf

HM2300B N-Channel Enhancement Mode Power MOSFET Description D The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.18. Size:194K  cn hmsemi
 hm2302bwsr.pdf

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) 20 0.29@ VGS=4.5V 0.5 SOT-563 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage

 9.19. Size:1387K  cn hmsemi
 hm2301bsr.pdf

HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BSR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

 9.20. Size:484K  cn hmsemi
 hm2302kr.pdf

HM2302KR N-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D 3 RDS(ON)

 9.21. Size:803K  cn hmsemi
 hm2301b.pdf

HM2301B P-Channel Enhancement Mode Power MOSFET Description D The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,ID = -2.5A RDS(ON)

 9.22. Size:1022K  cn hmsemi
 hm2309b.pdf

HM2309B P-Channel 60V(D-S) GENERAL DESCRIPTION FEATURES RDS(ON) 188m @VGS=-10V The HM2309B is the P-Channel logic enhancement mode power RDS(ON) 266m @VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

 9.23. Size:880K  cn hmsemi
 hm2302f.pdf

HM2302F N-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.8A RDS(ON)

 9.24. Size:1067K  cn hmsemi
 hm2300pr.pdf

HM2300PR N-Channel Enhancement Mode Power MOSFET Description D The HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S General Features Schematic diagram VDS = 20V,ID = 5.5A RDS(ON)

 9.25. Size:678K  cn hmsemi
 hm2300c.pdf

HM2300C N-Channel Enhancement Mode Power MOSFET Description D The HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

 9.26. Size:413K  cn hmsemi
 hm2309d.pdf

P-Channel Enhancement Mode Power MOSFET Description The HM2309D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON)

 9.27. Size:727K  cn hmsemi
 hm2301e.pdf

HM2301E P-Channel Trench Power MOSFET General Description The HM2301E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as -2.5V. This device is suitable for use as a battery protection or in other switching application. Features Schematic Diagram VDS = -12V,ID =-2.0A R

 9.28. Size:773K  cn hmsemi
 hm2302dr.pdf

GENERAL DESCRIPTION FEATURES The HM2302DR is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistan

 9.29. Size:273K  cn hmsemi
 hm2301bjr.pdf

HM2301BJR P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D 3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (mA) DS DS(on) D 0.45@ V =-4.5V GS G 1 -20 0.62@ VGS=-2.5V -800 0.86@ V =-1.8V GS S 2 Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage

 9.30. Size:742K  cn hmsemi
 hm2305d.pdf

HM2305D P-Channel Enhancement Mode Power MOSFET Description D The HM2305D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -8.0A RDS(ON)

 9.31. Size:522K  cn hmsemi
 hm2302a.pdf

 9.32. Size:608K  cn hmsemi
 hm2301dr.pdf

H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistan

 9.33. Size:704K  cn hmsemi
 hm2301d.pdf

H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistance

 9.34. Size:593K  cn hmsemi
 hm2309apr.pdf

HM2309APR P-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)

 9.35. Size:541K  cn hmsemi
 hm2309c.pdf

P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook

 9.36. Size:369K  cn hmsemi
 hm2302bwkr.pdf

HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) excellent RDS(ON), low gate charge and operation voltages as low as 1.8V, in the small SOT363 RDS(ON)

 9.37. Size:1397K  cn hmsemi
 hm2302bjr.pdf

J HM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m @ 4.5V 20V 450m @2.5V 0.75A 800m @1.8V 1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Manage

 9.38. Size:977K  cn hmsemi
 hm2300dr.pdf

HM2300DR N-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G battery protection or in other switching application. S General Features VDS = 20V,ID = 8.0A Schematic diagram RDS(ON)

 9.39. Size:1451K  cn hmsemi
 hm2301kr.pdf

HM2301KR P-Channel Enhancement Mode Power MOSFET DESCRIPTION D The HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

 9.40. Size:482K  cn hmsemi
 hm2305pr.pdf

HM2305PR P-Channel Enhancement Mode Power MOSFET Description D The HM2305PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,ID = - .1A RDS(ON)

 9.41. Size:648K  cn hmsemi
 hm2302b.pdf

HM2302B N-Channel Enhancement Mode Power MOSFET Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.5A RDS(ON)

 9.42. Size:806K  cn hmsemi
 hm2302e.pdf

HM2302E N-Channel Trench Power MOSFET General Description The HM2302E uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Schematic Diagram Features VDS = 15V,ID =2.0A R

 9.43. Size:1017K  cn hmsemi
 hm2302d.pdf

GENERAL DESCRIPTION FEATURES The HM2302D is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistance

 9.44. Size:465K  cn hmsemi
 hm2309al.pdf

HM2309AL H&M Semi P-Channel Enhancement Mode Power MOSFET Description The HM2309AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4.6A RDS(ON)

 9.45. Size:977K  cn hmsemi
 hm2301f.pdf

HM2301F P-Channel Enhancement Mode Power MOSFET Description D The HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -20V,ID = -2.8A RDS(ON)

 9.46. Size:1473K  cn hmsemi
 hm2309dr.pdf

 9.47. Size:553K  cn hmsemi
 hm2300.pdf

HM2300 N-Channel Enhancement Mode Power MOSFET Description D The HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S Schematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

 9.48. Size:473K  cn hmsemi
 hm2305.pdf

P-Channel Enhancement Mode Power MOSFET Description D The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -20V,ID = -4.1A RDS(ON)