HM2306 Datasheet and Replacement

HM2306 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2306 uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other Switching application. SGENERAL FEATURES VDS = 30V,ID = 5.8A Schematic diagram RDS(ON)

CHENMKO ENTERPRISE CO.,LTDCHM2304GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 2.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM2301ESGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 2.8 AmpereAPPLICATION* Po rtable* High speed switchFEATURESOT-23* Small surface mounting type. (SOT-23)* High density cell design for low RDS(ON)* Suitable for high packing density.* Rugged and reliable.(1)* High saturation current capabili

CHENMKO ENTERPRISE CO.,LTDCHM2308ESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 20 Volts CURRENT 5.4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High s

CHENMKO ENTERPRISE CO.,LTDCHM2307GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 3.2 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High sat

CHENMKO ENTERPRISE CO.,LTDCHM2305GPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.(2)* High satur

HM2301KRwww.VBsemi.twP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)c Qg (Typ.)Definition0.080 at VGS = - 4.5 V - 3.1 TrenchFET Power MOSFET4.3 nC- 200.100 at VGS = - 2.5 V - 2.3 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch DC/DC Convert

HM2305PRwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.050 at VGS = - 10 V - 7.6 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.056 at VGS = - 4.5 V - 6.0APPLICATIONS Load Switch Battery SwitchDS G G D SD P-Channel MOSFET ABS

HM2300www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Convert

HM2301A P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

HM2301 P-Channel Trench Power MOSFETGeneral DescriptionThe HM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as -2.5V. This device is suitable for use as abattery protection or in other switching application.FeaturesSchematic Diagram VDS = -12V,ID =-2. AR

HM2305BP-Channel Enhancement Mode Power MOSFET Description DThe HM2305B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -12V,ID = -4.1A RDS(ON)

HM2309P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)215m@VGS=-10V The HM2309 is the P-Channel logic enhancement mode power RDS(ON)260m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to Ex

HM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BKR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

HM2302N-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)

HM2300DN-Channel Enhancement Mode Power MOSFET Description DThe HM2300D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

HM2300BN-Channel Enhancement Mode Power MOSFET Description DThe HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

Description The MOSFET provide the best combination of fast switching, low on-resistance and cost-effectiveness. MOSFET Product Summary VDS(V) RDS(on)() ID(A) 20 0.29@ VGS=4.5V 0.5SOT-563 S2 1 D2 6 G2 2 G1 5 4 S1 3 D1 Absolute maximum rating@25 Parameter Symbol Maximum Units Drain-Source Voltage

HM2301BSR P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The HM2301BSR is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resist

HM2302KRN-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)

HM2301BP-Channel Enhancement Mode Power MOSFET Description DThe HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -2.5A RDS(ON)

HM2309B P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2309B is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

HM2302FN-Channel Enhancement Mode Power MOSFET Description The HM2302F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.8A RDS(ON)

HM2300PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2300PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SGeneral Features Schematic diagram VDS = 20V,ID = 5.5A RDS(ON)

HM2300CN-Channel Enhancement Mode Power MOSFET Description DThe HM2300C uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 6.0A RDS(ON)

P-Channel Enhancement Mode Power MOSFET Description The HM2309D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features VDS =-60V,ID =-1.6A Schematic diagram RDS(ON)

HM2301EP-Channel Trench Power MOSFETGeneral DescriptionThe HM2301E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as -2.5V. This device is suitable for use as abattery protection or in other switching application.FeaturesSchematic Diagram VDS = -12V,ID =-2.0AR

GENERAL DESCRIPTION FEATURES The HM2302DR is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistan

HM2301BJR P-Channel MOSFET Description The MOSFET provide the best combination of fast switching, D3 low on-resistance and cost-effectiveness. MOSFET Product Summary V (V) R ( ) I (mA) DS DS(on) D0.45@ V =-4.5V GSG1 -20 0.62@ VGS=-2.5V -800 0.86@ V =-1.8V GSS2Absolute maximum rating@25 Parameter Symbol Value Units Drain-Source Voltage

HM2305DP-Channel Enhancement Mode Power MOSFET Description DThe HM2305D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -8.0A RDS(ON)

HM2302AN-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2302A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.9A D3RDS(ON)

H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistan

H P-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The is the P-Channel logic enhancement mode power RDS(ON)= 0.48 @VGS=-4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 0.67 @VGS=-2.5V trench technology. This high density process is especially tailored to RDS(ON)= 0.95 @VGS=-1.8V minimize on-state resistance

HM2309APRP-Channel Enhancement Mode Power MOSFET Description The HM2309APR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)

P Channel Enhancement Mode MOSFET DESCRIPTION HM2309C is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook

HM2302BWKR Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The HM2302BWKR uses advanced trench technology to VDS (V) = 20V ID = 0.9 A (VGS = 4.5V) excellent RDS(ON), low gate charge and operation voltages as low as 1.8V, in the small SOT363 RDS(ON)

JHM2302BJR SOT-723 Plastic-Encapsulate MOSFETS HM2302BJR N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-723 380m@ 4.5V20V 450m@2.5V0.75A 800m@1.8V1. GATE 2. SOURCE 3. DRAIN FEATURES APPLICATION Lead Free Product is Acquired Load/Power Switching Surface Mount Package Interfacing Switching N-Channel Switch with Low RDS(on) Battery Manage

HM2300DRN-Channel Enhancement Mode Power MOSFET Description The HM2300DR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gbattery protection or in other switching application. SGeneral Features VDS = 20V,ID = 8.0A Schematic diagram RDS(ON)

HM2301KR P-Channel Enhancement Mode Power MOSFET DESCRIPTION DThe HM2301KR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -3A RDS(ON)

HM2305PRP-Channel Enhancement Mode Power MOSFET Description DThe HM2305PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Gload switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = - .1A RDS(ON)

HM2302BN-Channel Enhancement Mode Power MOSFET Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Schematic diagram General Features VDS = 20V,ID = 2.5A RDS(ON)

HM2302EN-Channel Trench Power MOSFETGeneral DescriptionThe HM2302E uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Schematic DiagramFeatures VDS = 15V,ID =2.0AR

GENERAL DESCRIPTION FEATURES The HM2302D is the N-Channel logic enhancement mode power RDS(ON)= 270 m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)= 330 m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)= 450 m @VGS=1.8V minimize on-state resistance

HM2309ALH&M Semi P-Channel Enhancement Mode Power MOSFET Description The HM2309AL uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-4.6A RDS(ON)

HM2301FP-Channel Enhancement Mode Power MOSFET Description DThe HM2301F uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. SGeneral Features Schematic diagram VDS = -20V,ID = -2.8A RDS(ON)

HM2309DR P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2309DR is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

HM2300N-Channel Enhancement Mode Power MOSFET Description DThe HM2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SSchematic diagram General Features VDS = 20V,ID = 4.5A RDS(ON)

P-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram General Features VDS = -20V,ID = -4.1A RDS(ON)