HM2807 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM2807
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 200 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 100 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 85 nC
Tiempo de subida (tr): 50 nS
Conductancia de drenaje-sustrato (Cd): 340 pF
Resistencia entre drenaje y fuente RDS(on): 0.013 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET HM2807
HM2807 Datasheet (PDF)
hm2807.pdf
HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)
hm2807d.pdf
HM2807D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)
hm2809dr.pdf
HM2809DR P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809DR is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to
hm2800d.pdf
HM2800DN-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2G1S2S1General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O
hm2809d.pdf
HM2809D P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809D is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to
hm2803d.pdf
HM2803DDual P-Channel Enhancement Mode Power MOSFET Description The HM2803D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G2G1S2S1General Features Schematic diagram VDS = -20V,ID = -5.0A RDS(ON)
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: HM85N80 | BSS169 | L2N7002SLT1G
