HM2807 MOSFET Datasheet: N-Ch, 100V, 100A. Full specification with pinout and replacement list

HM2807 Specs and Replacement

Type Designator: HM2807

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO-220

HM2807 substitution

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HM2807 datasheet

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HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON) ... See More ⇒

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hm2807d.pdf pdf_icon

HM2807D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON) ... See More ⇒

9.1. Size:1575K cn hmsemi
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9.2. Size:1154K cn hmsemi
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HM2800D N-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2 D1 excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2 G1 S2 S1 General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O... See More ⇒