Справочник MOSFET. HM2807

 

HM2807 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM2807
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 100 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 85 nC
   trⓘ - Время нарастания: 50 ns
   Cossⓘ - Выходная емкость: 340 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
   Тип корпуса: TO-220

 Аналог (замена) для HM2807

 

 

HM2807 Datasheet (PDF)

 ..1. Size:505K  cn hmsemi
 hm2807.pdf

HM2807 HM2807

HM2807 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)

 0.1. Size:544K  cn hmsemi
 hm2807d.pdf

HM2807 HM2807

HM2807D N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2807D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS = 100V,ID =100A RDS(ON)

 9.1. Size:1575K  cn hmsemi
 hm2809dr.pdf

HM2807 HM2807

HM2809DR P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809DR is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

 9.2. Size:1154K  cn hmsemi
 hm2800d.pdf

HM2807 HM2807

HM2800DN-Channel Enhancement Mode Power MOSFET Description The HM2800D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. G2G1S2S1General Features Schematic diagram VDS = 20V,ID = 5.0A RDS(O

 9.3. Size:1619K  cn hmsemi
 hm2809d.pdf

HM2807 HM2807

HM2809D P-Channel 60V(D-S)GENERAL DESCRIPTION FEATURES RDS(ON)188m@VGS=-10V The HM2809D is the P-Channel logic enhancement mode power RDS(ON)266m@VGS=-4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

 9.4. Size:907K  cn hmsemi
 hm2803d.pdf

HM2807 HM2807

HM2803DDual P-Channel Enhancement Mode Power MOSFET Description The HM2803D uses advanced trench technology to provide D2D1excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. G2G1S2S1General Features Schematic diagram VDS = -20V,ID = -5.0A RDS(ON)

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