HM2N10 Todos los transistores

 

HM2N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM2N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 22 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
   Paquete / Cubierta: TO92
 

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HM2N10 Datasheet (PDF)

 ..1. Size:351K  cn hmsemi
 hm2n10.pdf pdf_icon

HM2N10

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 0.1. Size:347K  cn hmsemi
 hm2n10b.pdf pdf_icon

HM2N10

HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 0.2. Size:377K  cn hmsemi
 hm2n10mr.pdf pdf_icon

HM2N10

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 9.1. Size:478K  cn hmsemi
 hm2n15r.pdf pdf_icon

HM2N10

HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... HM26N18K , HM2800D , HM2803D , HM2807 , HM2807D , HM2809D , HM2809DR , HM2907 , 18N50 , HM2N10B , HM2N10MR , HM2N15PR , HM2N15R , HM2N20 , HM2N20MR , HM2N20PR , HM2N20R .

History: IRF4104SPBF

 

 
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