HM2N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM2N10
Código: 0102Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.25 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 5.2 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 22 pF
Resistencia entre drenaje y fuente RDS(on): 0.24 Ohm
Paquete / Cubierta: TO92
Búsqueda de reemplazo de MOSFET HM2N10
HM2N10 Datasheet (PDF)
hm2n10.pdf
N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n10b.pdf
HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n10mr.pdf
N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n15r.pdf
HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
hm2n15pr.pdf
HM2N15PRN-Channel Enhancement Mode Power MOSFET DDescription The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID = 2A RDS(ON)
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
