HM2N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM2N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 22 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Encapsulados: TO92
Búsqueda de reemplazo de HM2N10 MOSFET
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HM2N10 datasheet
hm2n10.pdf
N-Channel Enhancement Mode Power MOSFET Description D The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n10b.pdf
HM N-Channel Enhancement Mode Power MOSFET Description D The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n10mr.pdf
N-Channel Enhancement Mode Power MOSFET Description D The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n15r.pdf
HM2N15R N-Channel Enhancement Mode Power MOSFET Description D The HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. S General Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
Otros transistores... HM26N18K, HM2800D, HM2803D, HM2807, HM2807D, HM2809D, HM2809DR, HM2907, BS170, HM2N10B, HM2N10MR, HM2N15PR, HM2N15R, HM2N20, HM2N20MR, HM2N20PR, HM2N20R
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