All MOSFET. HM2N10 Datasheet

 

HM2N10 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM2N10
   Marking Code: 0102Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 22 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: TO92

 HM2N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM2N10 Datasheet (PDF)

 ..1. Size:351K  cn hmsemi
 hm2n10.pdf

HM2N10 HM2N10

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 0.1. Size:347K  cn hmsemi
 hm2n10b.pdf

HM2N10 HM2N10

HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 0.2. Size:377K  cn hmsemi
 hm2n10mr.pdf

HM2N10 HM2N10

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 9.1. Size:478K  cn hmsemi
 hm2n15r.pdf

HM2N10 HM2N10

HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

 9.2. Size:745K  cn hmsemi
 hm2n15pr.pdf

HM2N10 HM2N10

HM2N15PRN-Channel Enhancement Mode Power MOSFET DDescription The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID = 2A RDS(ON)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: BRD7N60 | BRD18P06

 

 
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