HM2N15PR Todos los transistores

 

HM2N15PR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM2N15PR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
   Paquete / Cubierta: SOT-89
 

 Búsqueda de reemplazo de HM2N15PR MOSFET

   - Selección ⓘ de transistores por parámetros

 

HM2N15PR Datasheet (PDF)

 ..1. Size:745K  cn hmsemi
 hm2n15pr.pdf pdf_icon

HM2N15PR

HM2N15PRN-Channel Enhancement Mode Power MOSFET DDescription The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID = 2A RDS(ON)

 8.1. Size:478K  cn hmsemi
 hm2n15r.pdf pdf_icon

HM2N15PR

HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)

 9.1. Size:351K  cn hmsemi
 hm2n10.pdf pdf_icon

HM2N15PR

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)

 9.2. Size:347K  cn hmsemi
 hm2n10b.pdf pdf_icon

HM2N15PR

HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)

MOSTRAR MÁS

Otros transistores... HM2807 , HM2807D , HM2809D , HM2809DR , HM2907 , HM2N10 , HM2N10B , HM2N10MR , P0903BDG , HM2N15R , HM2N20 , HM2N20MR , HM2N20PR , HM2N20R , HM2N25 , HM2N60 , HM2N65R .

History: IXFR80N10Q | AP9120GH-HF | 12N70KL-TA3-T | P6006BI | CTD03N10P5 | 1N60G-TF2-T | AP18N20GS-HF

 

 
Back to Top

 


 
.