HM2N15PR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM2N15PR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 36 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm
Paquete / Cubierta: SOT-89
Búsqueda de reemplazo de HM2N15PR MOSFET
HM2N15PR Datasheet (PDF)
hm2n15pr.pdf

HM2N15PRN-Channel Enhancement Mode Power MOSFET DDescription The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID = 2A RDS(ON)
hm2n15r.pdf

HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
hm2n10.pdf

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n10b.pdf

HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
Otros transistores... HM2807 , HM2807D , HM2809D , HM2809DR , HM2907 , HM2N10 , HM2N10B , HM2N10MR , P0903BDG , HM2N15R , HM2N20 , HM2N20MR , HM2N20PR , HM2N20R , HM2N25 , HM2N60 , HM2N65R .
History: LSB55R050GT | HM10P10D | FDU6688 | UPA1950
History: LSB55R050GT | HM10P10D | FDU6688 | UPA1950



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JBE084M | JBE083NS | JBE083M | JMH70R430AK | JMH70R430AF | JMH65R980APLN | JMH65R980AKQ | JMH65R980AK | JMH65R980AF | JMH65R980ACFP | JMH65R640AK | JMH65R600MK | JMH65R600MF | JMPL1025AK | JMPL1025AE | JMPL0648PKQ
Popular searches
mpsa92 | tip142 | d882 | irf740 datasheet | ksa992 | irfb4227 | irfb4110 | tip36c