HM2N15PR Datasheet and Replacement
Type Designator: HM2N15PR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 36 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SOT-89
HM2N15PR substitution
HM2N15PR Datasheet (PDF)
hm2n15pr.pdf

HM2N15PRN-Channel Enhancement Mode Power MOSFET DDescription The HM2N15PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 150V,ID = 2A RDS(ON)
hm2n15r.pdf

HM2N15RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 150V,ID = 2A Schematic diagram RDS(ON)
hm2n10.pdf

N-Channel Enhancement Mode Power MOSFET Description DThe uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 100V,ID = 2A Schematic diagram RDS(ON)
hm2n10b.pdf

HM N-Channel Enhancement Mode Power MOSFET Description DThe HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. SGeneral Features VDS = 100V,ID = 2A Schematic diagram RDS(ON)
Datasheet: HM2807 , HM2807D , HM2809D , HM2809DR , HM2907 , HM2N10 , HM2N10B , HM2N10MR , RFP50N06 , HM2N15R , HM2N20 , HM2N20MR , HM2N20PR , HM2N20R , HM2N25 , HM2N60 , HM2N65R .
History: KQB9N50
Keywords - HM2N15PR MOSFET datasheet
HM2N15PR cross reference
HM2N15PR equivalent finder
HM2N15PR lookup
HM2N15PR substitution
HM2N15PR replacement
History: KQB9N50



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