HM2N20R Todos los transistores

 

HM2N20R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM2N20R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 3 W
   Voltaje máximo drenador - fuente |Vds|: 200 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 2 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
   Carga de la puerta (Qg): 12 nC
   Tiempo de subida (tr): 12 nS
   Conductancia de drenaje-sustrato (Cd): 90 pF
   Resistencia entre drenaje y fuente RDS(on): 0.58 Ohm
   Paquete / Cubierta: SOT223

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HM2N20R Datasheet (PDF)

 ..1. Size:1034K  cn hmsemi
hm2n20r.pdf

HM2N20R HM2N20R

HM2N20RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)

 8.1. Size:922K  cn hmsemi
hm2n20mr.pdf

HM2N20R HM2N20R

HM2N20MR200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent R with low gate charge. DS(ON) It can be used in a wide variety of applications. General Features V = 200V,I =2A DS DR

 8.2. Size:576K  cn hmsemi
hm2n20.pdf

HM2N20R HM2N20R

HM2N20N-Channel Enhancement Mode Power MOSFET DDescription The HM2N20 uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)

 8.3. Size:537K  cn hmsemi
hm2n20pr.pdf

HM2N20R HM2N20R

HM2N20PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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