HM2N20R - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM2N20R
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 12 ns
Cossⓘ - Выходная емкость: 90 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.58 Ohm
Тип корпуса: SOT223
Аналог (замена) для HM2N20R
HM2N20R Datasheet (PDF)
hm2n20r.pdf

HM2N20RN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)
hm2n20mr.pdf

HM2N20MR200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent R with low gate charge. DS(ON) It can be used in a wide variety of applications. General Features V = 200V,I =2A DS DR
hm2n20.pdf

HM2N20N-Channel Enhancement Mode Power MOSFET DDescription The HM2N20 uses advanced trench technology and Gdesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. SGeneral Features Schematic diagram VDS = 200V,ID =2A RDS(ON)
hm2n20pr.pdf

HM2N20PRN-Channel Enhancement Mode Power MOSFET Description DThe HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It Gcan be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON)
Другие MOSFET... HM2N10 , HM2N10B , HM2N10MR , HM2N15PR , HM2N15R , HM2N20 , HM2N20MR , HM2N20PR , 2N60 , HM2N25 , HM2N60 , HM2N65R , HM2N70 , HM2N70R , HM2P10PR , HM2P10R , HM3018 .
History: TSM9426DCS | 2SK2875-01
History: TSM9426DCS | 2SK2875-01



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