HM2N20R Specs and Replacement
Type Designator: HM2N20R
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: SOT223
HM2N20R substitution
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HM2N20R datasheet
hm2n20mr.pdf
HM2N20MR 200V N-Channel Enhancement Mode MOSFET Description The HM2N20MR uses advanced trench technology and design to provide excellent R with low gate charge. DS(ON) It can be used in a wide variety of applications. General Features V = 200V,I =2A DS D R ... See More ⇒
hm2n20.pdf
HM2N20 N-Channel Enhancement Mode Power MOSFET D Description The HM2N20 uses advanced trench technology and G design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. S General Features Schematic diagram VDS = 200V,ID =2A RDS(ON) ... See More ⇒
hm2n20pr.pdf
HM2N20PR N-Channel Enhancement Mode Power MOSFET Description D The HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It G can be used in a wide variety of applications. General Features S VDS = 200V,ID =2A Schematic diagram RDS(ON) ... See More ⇒
Detailed specifications: HM2N10, HM2N10B, HM2N10MR, HM2N15PR, HM2N15R, HM2N20, HM2N20MR, HM2N20PR, SI2302, HM2N25, HM2N60, HM2N65R, HM2N70, HM2N70R, HM2P10PR, HM2P10R, HM3018
Keywords - HM2N20R MOSFET specs
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