HM3018SR Todos los transistores

 

HM3018SR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM3018SR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 9 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: SOT523
 

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HM3018SR Datasheet (PDF)

 ..1. Size:1303K  cn hmsemi
 hm3018sr.pdf pdf_icon

HM3018SR

J HM3018SR SOT-523 Plastic-Encapsulate MOSFETS HM3018SR N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-523 8@4V30V100mA13@2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Low on-resistance Interfacing , Switching Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Ea

 8.1. Size:1205K  cn hmsemi
 hm3018.pdf pdf_icon

HM3018SR

HM3018 / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,,,Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applications

 8.2. Size:1239K  cn hmsemi
 hm3018jr.pdf pdf_icon

HM3018SR

J HM3018JR SOT-723 Plastic-Encapsulate MOSFETSHM3018JR N-Channel MOSFET SOT-723 ID V(BR)DSS RDS(on)MAX 8@4V30V100mA13@2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Drive circuits can be simple Paral

 8.3. Size:412K  cn hmsemi
 hm3018kr.pdf pdf_icon

HM3018SR

HM3018KRSilicon N-channel MOSFET100 mA, 30 V Features 31) Low on-resistance. 2) Fast switching speed. 13) Low voltage drive (2.5V) makes this device ideal for portable equipment.24) Easily designed drive circuits. 5) Easy to parallel. SC-70 ESD>500V We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and O

MOSTRAR MÁS

Otros transistores... HM2N65R , HM2N70 , HM2N70R , HM2P10PR , HM2P10R , HM3018 , HM3018JR , HM3018KR , IRF520 , HM30N02D , HM30N02K , HM30N02Q , HM30N03K , HM30N04D , HM30N04Q , HM30N10 , HM30N10D .

History: SM1A18NSQG | NCE8205I | AO4294 | FHF10N65A | 2SK1608

 

 
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