HM3018SR MOSFET. Datasheet pdf. Equivalent
Type Designator: HM3018SR
Marking Code: KN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 9 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT523
HM3018SR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HM3018SR Datasheet (PDF)
hm3018sr.pdf
J HM3018SR SOT-523 Plastic-Encapsulate MOSFETS HM3018SR N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-523 8@4V30V100mA13@2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Low on-resistance Interfacing , Switching Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily designed drive circuits Ea
hm3018.pdf
HM3018 / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features ,,,Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applications
hm3018jr.pdf
J HM3018JR SOT-723 Plastic-Encapsulate MOSFETSHM3018JR N-Channel MOSFET SOT-723 ID V(BR)DSS RDS(on)MAX 8@4V30V100mA13@2.5V1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Drive circuits can be simple Paral
hm3018kr.pdf
HM3018KRSilicon N-channel MOSFET100 mA, 30 V Features 31) Low on-resistance. 2) Fast switching speed. 13) Low voltage drive (2.5V) makes this device ideal for portable equipment.24) Easily designed drive circuits. 5) Easy to parallel. SC-70 ESD>500V We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and O
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