HM30N02K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM30N02K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.2 nS
Cossⓘ - Capacitancia de salida: 162 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de HM30N02K MOSFET
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HM30N02K datasheet
hm30n02k.pdf
HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n02d.pdf
HM30N02D Description The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n02q.pdf
HM30N02Q Description The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n04q.pdf
HM30N04Q N-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)
Otros transistores... HM2N70R, HM2P10PR, HM2P10R, HM3018, HM3018JR, HM3018KR, HM3018SR, HM30N02D, IRFB31N20D, HM30N02Q, HM30N03K, HM30N04D, HM30N04Q, HM30N10, HM30N10D, HM30N10K, HM30P02K
History: 2SK3906 | PSMN5R0-100PS | TK100F06K3 | 2SJ577 | AP9966GM-HF
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