All MOSFET. HM30N02K Datasheet

 

HM30N02K Datasheet and Replacement


   Type Designator: HM30N02K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252
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HM30N02K Datasheet (PDF)

 ..1. Size:474K  cn hmsemi
 hm30n02k.pdf pdf_icon

HM30N02K

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

 7.1. Size:861K  cn hmsemi
 hm30n02d.pdf pdf_icon

HM30N02K

HM30N02DDescription The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

 7.2. Size:707K  cn hmsemi
 hm30n02q.pdf pdf_icon

HM30N02K

HM30N02QDescription The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

 8.1. Size:1242K  cn hmsemi
 hm30n04q.pdf pdf_icon

HM30N02K

HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)

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History: RJK0331DPB-00

Keywords - HM30N02K MOSFET datasheet

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