HM30N02K - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM30N02K
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 9.2 ns
Cossⓘ - Выходная емкость: 162 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: TO252
Аналог (замена) для HM30N02K
HM30N02K Datasheet (PDF)
hm30n02k.pdf
HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n02d.pdf
HM30N02DDescription The HM30N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n02q.pdf
HM30N02QDescription The HM30N02Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
hm30n04q.pdf
HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)
Другие MOSFET... HM2N70R , HM2P10PR , HM2P10R , HM3018 , HM3018JR , HM3018KR , HM3018SR , HM30N02D , IRFB31N20D , HM30N02Q , HM30N03K , HM30N04D , HM30N04Q , HM30N10 , HM30N10D , HM30N10K , HM30P02K .
History: CS2N70A6 | STP18NM80 | NP110N04PUJ | CS2N70A4 | NP110N055PUK
History: CS2N70A6 | STP18NM80 | NP110N04PUJ | CS2N70A4 | NP110N055PUK
Список транзисторов
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