HM30N04Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM30N04Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 65 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17.2 nS
Cossⓘ - Capacitancia de salida: 280 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
Encapsulados: DFN3X3-8L
Búsqueda de reemplazo de HM30N04Q MOSFET
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HM30N04Q datasheet
hm30n04q.pdf
HM30N04Q N-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)
hm30n04d.pdf
HM30N04D N-Channel Enhancement Mode Power MOSFET Description The HM30N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID = 0A RDS(ON)
hm30n03k.pdf
HM30N03K Description The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
hm30n02k.pdf
HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
Otros transistores... HM3018JR, HM3018KR, HM3018SR, HM30N02D, HM30N02K, HM30N02Q, HM30N03K, HM30N04D, IRFZ48N, HM30N10, HM30N10D, HM30N10K, HM30P02K, HM30P03Q, HM30P10K, HM30P55, HM30P55K
History: NCE4090G | IXFX24N100 | AON7522E
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