All MOSFET. HM30N04Q Datasheet

 

HM30N04Q Datasheet and Replacement


   Type Designator: HM30N04Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 17.2 nS
   Cossⓘ - Output Capacitance: 280 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: DFN3X3-8L
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HM30N04Q Datasheet (PDF)

 ..1. Size:1242K  cn hmsemi
 hm30n04q.pdf pdf_icon

HM30N04Q

HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)

 7.1. Size:909K  cn hmsemi
 hm30n04d.pdf pdf_icon

HM30N04Q

HM30N04DN-Channel Enhancement Mode Power MOSFET Description The HM30N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID = 0A RDS(ON)

 8.1. Size:509K  cn hmsemi
 hm30n03k.pdf pdf_icon

HM30N04Q

HM30N03KDescription The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

 8.2. Size:474K  cn hmsemi
 hm30n02k.pdf pdf_icon

HM30N04Q

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)

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History: AP9971AGH-HF | 30P06 | 2SK951-01 | 3415 | BUK7Y08-40B | APL1001J | 3080K

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