HM30N04Q Datasheet and Replacement
Type Designator: HM30N04Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 17.2 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: DFN3X3-8L
HM30N04Q substitution
HM30N04Q Datasheet (PDF)
hm30n04q.pdf
HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)
hm30n04d.pdf
HM30N04DN-Channel Enhancement Mode Power MOSFET Description The HM30N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID = 0A RDS(ON)
hm30n03k.pdf
HM30N03KDescription The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
hm30n02k.pdf
HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
Datasheet: HM3018JR , HM3018KR , HM3018SR , HM30N02D , HM30N02K , HM30N02Q , HM30N03K , HM30N04D , IRFZ48N , HM30N10 , HM30N10D , HM30N10K , HM30P02K , HM30P03Q , HM30P10K , HM30P55 , HM30P55K .
History: STP190NF04
Keywords - HM30N04Q MOSFET datasheet
HM30N04Q cross reference
HM30N04Q equivalent finder
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: STP190NF04
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