HM30N04Q - параметры транзистора MOSFET, его аналоги, datasheet

HM30N04Q Datasheet (PDF)

..1. Size:1242K cn hmsemi
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HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)

7.1. Size:909K cn hmsemi
hm30n04d.pdf pdf_icon

HM30N04DN-Channel Enhancement Mode Power MOSFET Description The HM30N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID = 0A RDS(ON)

8.1. Size:509K cn hmsemi
hm30n03k.pdf pdf_icon

HM30N03KDescription The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)

8.2. Size:474K cn hmsemi
hm30n02k.pdf pdf_icon

HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)