HM30N04Q - Даташиты. Аналоги. Основные параметры
Наименование производителя: HM30N04Q
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 65 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 30 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 17.2 ns
Cossⓘ - Выходная емкость: 280 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm
Тип корпуса: DFN3X3-8L
Аналог (замена) для HM30N04Q
HM30N04Q Datasheet (PDF)
hm30n04q.pdf
HM30N04QN-Channel Enhancement Mode Power MOSFET Description The HM30N04Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =30A RDS(ON)
hm30n04d.pdf
HM30N04DN-Channel Enhancement Mode Power MOSFET Description The HM30N04D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID = 0A RDS(ON)
hm30n03k.pdf
HM30N03KDescription The 30 K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =30A RDS(ON)
hm30n02k.pdf
HM30N02K N-Channel Enhancement Mode Power MOSFET Description The HM30N02K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =30A RDS(ON)
Другие MOSFET... HM3018JR , HM3018KR , HM3018SR , HM30N02D , HM30N02K , HM30N02Q , HM30N03K , HM30N04D , IRFZ48N , HM30N10 , HM30N10D , HM30N10K , HM30P02K , HM30P03Q , HM30P10K , HM30P55 , HM30P55K .
History: FDFME3N311ZT | STP180N55F3
History: FDFME3N311ZT | STP180N55F3
Список транзисторов
Обновления
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