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HM30N10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HM30N10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 85 W
   Voltaje máximo drenador - fuente |Vds|: 100 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 30 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 39 nC
   Tiempo de subida (tr): 7 nS
   Conductancia de drenaje-sustrato (Cd): 300 pF
   Resistencia entre drenaje y fuente RDS(on): 0.031 Ohm
   Paquete / Cubierta: TO220

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HM30N10 Datasheet (PDF)

 ..1. Size:931K  cn hmsemi
hm30n10.pdf

HM30N10
HM30N10

HM30N10 N-Channel Enhancement Mode Power MOSFET Description The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 0.1. Size:642K  cn hmsemi
hm30n10k.pdf

HM30N10
HM30N10

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 0.2. Size:602K  cn hmsemi
hm30n10d.pdf

HM30N10
HM30N10

Pb Free ProductHM30N10DN-Channel Enhancement Mode Power MOSFET Description The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

 8.1. Size:144K  chenmko
chm30n15lngp.pdf

HM30N10
HM30N10

CHENMKO ENTERPRISE CO.,LTDCHM30N15LNGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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