HM30N10 - аналоги, параметры транзистора - Справочник транзисторов

HM30N10 даташит

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HM30N10 N-Channel Enhancement Mode Power MOSFET Description The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

0.2. Size:602K cn hmsemi
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Pb Free Product HM30N10D N-Channel Enhancement Mode Power MOSFET Description The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

8.1. Size:144K chenmko
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CHENMKO ENTERPRISE CO.,LTD CHM30N15LNGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D2PAK FEATURE * Small package. (D2PAK) * Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

Другие MOSFET... HM3018KR , HM3018SR , HM30N02D , HM30N02K , HM30N02Q , HM30N03K , HM30N04D , HM30N04Q , IRFZ46N , HM30N10D , HM30N10K , HM30P02K , HM30P03Q , HM30P10K , HM30P55 , HM30P55K , HM3205 .