HM30N10 Datasheet and Replacement. Cross Reference Search

HM30N10 Datasheet (PDF)

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HM30N10 N-Channel Enhancement Mode Power MOSFET Description The HM30N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

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N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

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Pb Free ProductHM30N10DN-Channel Enhancement Mode Power MOSFET Description The HM30N10D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =30A RDS(ON)

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CHENMKO ENTERPRISE CO.,LTDCHM30N15LNGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 150 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D2PAKFEATURE* Small package. (D2PAK)* Super high dense cell design for extremely low RDS(ON). * High power and current handing capability. 0

Datasheet: HM3018KR , HM3018SR , HM30N02D , HM30N02K , HM30N02Q , HM30N03K , HM30N04D , HM30N04Q , STP65NF06 , HM30N10D , HM30N10K , HM30P02K , HM30P03Q , HM30P10K , HM30P55 , HM30P55K , HM3205 .