HM30P10K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HM30P10K
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 136 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 93 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET HM30P10K

HM30P10K Datasheet (PDF)

..1. Size:569K cn hmsemi
hm30p10k.pdf

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

9.1. Size:524K cn hmsemi
hm30p55k.pdf

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

9.2. Size:1282K cn hmsemi
hm30p03q.pdf

HM30P03Q-30VDS20VGS-30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin DescriptionPin Description VDSS=-30VVGSS=20VID=-30A RDS(ON)=14m(max.)@VGS=-10V RDS(ON)=22m(max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter

9.3. Size:547K cn hmsemi
hm30p55.pdf

9.4. Size:1112K cn hmsemi
hm30p02k.pdf

P-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -30A RDS(ON)

Otros transistores... AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: KU2303Q

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