HM30P10K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HM30P10K
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 30 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 80 nS
Cossⓘ - Capacitancia de salida: 93 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de HM30P10K MOSFET
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HM30P10K datasheet
hm30p10k.pdf
P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)
hm30p55k.pdf
P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)
hm30p03q.pdf
HM30P03Q -30VDS 20VGS -30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin Description Pin Description VDSS=-30V VGSS= 20V ID=-30A RDS(ON)=14m (max.)@VGS=-10V RDS(ON)=22m (max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter
hm30p55.pdf
P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)
Otros transistores... HM30N03K, HM30N04D, HM30N04Q, HM30N10, HM30N10D, HM30N10K, HM30P02K, HM30P03Q, AON7403, HM30P55, HM30P55K, HM3205, HM3205B, HM3205D, HM3207, HM3207B, HM3207BD
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