Справочник MOSFET. HM30P10K

 

HM30P10K MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM30P10K
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 30 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 136 nC
   trⓘ - Время нарастания: 80 ns
   Cossⓘ - Выходная емкость: 93 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.058 Ohm
   Тип корпуса: TO252

 Аналог (замена) для HM30P10K

 

 

HM30P10K Datasheet (PDF)

 ..1. Size:569K  cn hmsemi
 hm30p10k.pdf

HM30P10K HM30P10K

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 9.1. Size:524K  cn hmsemi
 hm30p55k.pdf

HM30P10K HM30P10K

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

 9.2. Size:1282K  cn hmsemi
 hm30p03q.pdf

HM30P10K HM30P10K

HM30P03Q-30VDS20VGS-30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin DescriptionPin Description VDSS=-30VVGSS=20VID=-30A RDS(ON)=14m(max.)@VGS=-10V RDS(ON)=22m(max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter

 9.3. Size:547K  cn hmsemi
 hm30p55.pdf

HM30P10K HM30P10K

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

 9.4. Size:1112K  cn hmsemi
 hm30p02k.pdf

HM30P10K HM30P10K

P-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -30A RDS(ON)

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HM3401D

 

 
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