All MOSFET. HM30P10K Datasheet

 

HM30P10K MOSFET. Datasheet pdf. Equivalent


   Type Designator: HM30P10K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 136 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TO252

 HM30P10K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HM30P10K Datasheet (PDF)

 ..1. Size:569K  cn hmsemi
 hm30p10k.pdf

HM30P10K HM30P10K

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON)

 9.1. Size:524K  cn hmsemi
 hm30p55k.pdf

HM30P10K HM30P10K

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON)

 9.2. Size:1282K  cn hmsemi
 hm30p03q.pdf

HM30P10K HM30P10K

HM30P03Q-30VDS20VGS-30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin DescriptionPin Description VDSS=-30VVGSS=20VID=-30A RDS(ON)=14m(max.)@VGS=-10V RDS(ON)=22m(max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter

 9.3. Size:547K  cn hmsemi
 hm30p55.pdf

HM30P10K HM30P10K

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON)

 9.4. Size:1112K  cn hmsemi
 hm30p02k.pdf

HM30P10K HM30P10K

P-Channel Enhancement Mode Power MOSFET DDescription The uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Sload switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -30A RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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