HM30P10K MOSFET Datasheet: P-Ch, 100V, 30A. Full specification with pinout and replacement list

HM30P10K Specs and Replacement

   Type Designator: HM30P10K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 93 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TO252

HM30P10K substitution

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HM30P10K datasheet

..1. Size:569K cn hmsemi
hm30p10k.pdf pdf_icon

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. General Features VDS =-100V,ID =-30A Schematic diagram RDS(ON) ... See More ⇒

9.1. Size:524K cn hmsemi
hm30p55k.pdf pdf_icon

P-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =-55V,ID =-30A RDS(ON) ... See More ⇒

9.2. Size:1282K cn hmsemi
hm30p03q.pdf pdf_icon

HM30P03Q -30VDS 20VGS -30A(ID) P-Channel Enha ncement Mode MOSFET Features Pin Description Pin Description VDSS=-30V VGSS= 20V ID=-30A RDS(ON)=14m (max.)@VGS=-10V RDS(ON)=22m (max.)@VGS=-4.5V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter ... See More ⇒

9.3. Size:547K cn hmsemi
hm30p55.pdf pdf_icon

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-30A RDS(ON) ... See More ⇒