HM3305 Todos los transistores

 ..1. Size:652K  cn hmsemi
 hm3305.pdf

HM3305 N-Channel Enhancement Mode Power MOSFET Description The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 0.1. Size:436K  cn hmsemi
 hm3305d.pdf

5D N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 9.1. Size:101K  chenmko
 chm3301pagp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM3301PAGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 28 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK(TO-252) FEATURE * Small flat package. ( TO-252 ) * Super high density cell design for extremely low RDS(ON). .094 (2.40) .280 (7.10) * Hi

 9.2. Size:174K  chenmko
 chm3301jgp.pdf

CHENMKO ENTERPRISE CO.,LTD CHM3301JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.0 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 9.3. Size:1238K  cn hmsemi
 hm3306.pdf

Pin Description Features VDSS=60V VGSS= 25V ID=180A RDS(ON)=5m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Sys

 9.4. Size:1217K  cn hmsemi
 hm3307b.pdf

HM3307B 70VDS 25VGS 114A(ID) N-Channel Enha ncement Mode MOSFET Pin Description Features VDSS=70V VGSS= 25V ID=114A RDS(ON)=8m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter System Switching Time Test Circuit and HM3307B

 9.5. Size:1133K  cn hmsemi
 hm3307.pdf

Pin Description Features VDSS=80V VGSS= 25V ID=110A RDS(ON)=9m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter System

 9.6. Size:702K  cn hmsemi
 hm3307a.pdf

HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3307A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =120A RDS(ON)