HM3305
MOSFET. Datasheet pdf. Equivalent
Type Designator: HM3305
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 220
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 150
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 163
nC
trⓘ - Rise Time: 24
nS
Cossⓘ -
Output Capacitance: 650
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045
Ohm
Package:
TO220
HM3305
Datasheet (PDF)
..1. Size:652K cn hmsemi
hm3305.pdf 
HM3305N-Channel Enhancement Mode Power MOSFET Description The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)
0.1. Size:436K cn hmsemi
hm3305d.pdf
5D N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)
9.1. Size:101K chenmko
chm3301pagp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi
9.2. Size:174K chenmko
chm3301jgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHM3301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power
9.3. Size:1238K cn hmsemi
hm3306.pdf
Pin Description Features VDSS=60VVGSS=25VID=180A RDS(ON)=5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Sys
9.4. Size:1217K cn hmsemi
hm3307b.pdf
HM3307B 70VDS25VGS114A(ID) N-Channel Enha ncement Mode MOSFET Pin Description Features VDSS=70VVGSS=25VID=114A RDS(ON)=8m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter SystemSwitching Time Test Circuit and HM3307B
9.5. Size:1133K cn hmsemi
hm3307.pdf
Pin Description Features VDSS=80VVGSS=25VID=110A RDS(ON)=9m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter System
9.6. Size:702K cn hmsemi
hm3307a.pdf
HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3307A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =120A RDS(ON)
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