HM3305 - Даташиты. Аналоги. Основные параметры

HM3305N-Channel Enhancement Mode Power MOSFET Description The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

5D N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

CHENMKO ENTERPRISE CO.,LTDCHM3301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi

CHENMKO ENTERPRISE CO.,LTDCHM3301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

Pin Description Features VDSS=60VVGSS=25VID=180A RDS(ON)=5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Sys

HM3307B 70VDS25VGS114A(ID) N-Channel Enha ncement Mode MOSFET Pin Description Features VDSS=70VVGSS=25VID=114A RDS(ON)=8m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter SystemSwitching Time Test Circuit and HM3307B

Pin Description Features VDSS=80VVGSS=25VID=110A RDS(ON)=9m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter System

HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3307A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =120A RDS(ON)