Справочник MOSFET. HM3305

 

HM3305 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: HM3305
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 220 W
   Предельно допустимое напряжение сток-исток |Uds|: 60 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 150 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 163 nC
   Время нарастания (tr): 24 ns
   Выходная емкость (Cd): 650 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0045 Ohm
   Тип корпуса: TO220

 Аналог (замена) для HM3305

 

 

HM3305 Datasheet (PDF)

 ..1. Size:652K  cn hmsemi
hm3305.pdf

HM3305
HM3305

HM3305N-Channel Enhancement Mode Power MOSFET Description The HM3305 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 0.1. Size:436K  cn hmsemi
hm3305d.pdf

HM3305
HM3305

5D N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =150A RDS(ON)

 9.1. Size:101K  chenmko
chm3301pagp.pdf

HM3305
HM3305

CHENMKO ENTERPRISE CO.,LTDCHM3301PAGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 28 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.D-PAK(TO-252)FEATURE* Small flat package. ( TO-252 )* Super high density cell design for extremely low RDS(ON). .094 (2.40).280 (7.10)* Hi

 9.2. Size:174K  chenmko
chm3301jgp.pdf

HM3305
HM3305

CHENMKO ENTERPRISE CO.,LTDCHM3301JGPSURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7.0 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SO-8FEATURE* Small flat package. (SO-8 )( )* Super high dense cell design for extremely low RDS(ON). 4.06 0.160( )3.70 0.146* High power

 9.3. Size:1238K  cn hmsemi
hm3306.pdf

HM3305
HM3305

Pin Description Features VDSS=60VVGSS=25VID=180A RDS(ON)=5m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter Sys

 9.4. Size:1217K  cn hmsemi
hm3307b.pdf

HM3305
HM3305

HM3307B 70VDS25VGS114A(ID) N-Channel Enha ncement Mode MOSFET Pin Description Features VDSS=70VVGSS=25VID=114A RDS(ON)=8m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter SystemSwitching Time Test Circuit and HM3307B

 9.5. Size:1133K  cn hmsemi
hm3307.pdf

HM3305
HM3305

Pin Description Features VDSS=80VVGSS=25VID=110A RDS(ON)=9m(max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter System

 9.6. Size:702K  cn hmsemi
hm3307a.pdf

HM3305
HM3305

HM N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM3307A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =80V,ID =120A RDS(ON)

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