FDMC3020DC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC3020DC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0063 Ohm

Encapsulados: POWER33

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FDMC3020DC datasheet

 ..1. Size:446K  fairchild semi
 fdmc3020dc.pdf pdf_icon

FDMC3020DC

October 2010 FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

 9.1. Size:253K  1
 fdmc3612.pdf pdf_icon

FDMC3020DC

FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

 9.2. Size:346K  fairchild semi
 fdmc3612.pdf pdf_icon

FDMC3020DC

August 2010 FDMC3612 N-Channel Power Trench MOSFET 100 V, 12 A, 110 m Features General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 A been especially tailored to minimize the on-state resistance and Low Profi

 9.3. Size:253K  onsemi
 fdmc3612.pdf pdf_icon

FDMC3020DC

FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

MOSTRAR MÁS

Otros transistores... FDMB668P, FDMC15N06, FDMC2512SDC, FDMC2514SDC, FDMC2523P, FDMC2610, STS2620, FDMC2674, SI2302, STS2601, FDMC3612, STS2309A, FDMC4435BZ, FDMC510P, FDMC5614P, FDMC6296, STS2308A