Справочник MOSFET. FDMC3020DC

 

FDMC3020DC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDMC3020DC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 50 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0063 Ohm
   Тип корпуса: POWER33

 Аналог (замена) для FDMC3020DC

 

 

FDMC3020DC Datasheet (PDF)

 ..1. Size:446K  fairchild semi
 fdmc3020dc.pdf

FDMC3020DC FDMC3020DC

October 2010FDMC3020DCN-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

 9.1. Size:253K  1
 fdmc3612.pdf

FDMC3020DC FDMC3020DC

FDMC3612General DescriptionN-Channel Power Trench MOSFETThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has 100 V, 12 A, 110 mbeen especially tailored to minimize the on-state resistance and Featuresyet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

 9.2. Size:346K  fairchild semi
 fdmc3612.pdf

FDMC3020DC FDMC3020DC

August 2010FDMC3612N-Channel Power Trench MOSFET 100 V, 12 A, 110 mFeatures General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 Abeen especially tailored to minimize the on-state resistance and Low Profi

 9.3. Size:253K  onsemi
 fdmc3612.pdf

FDMC3020DC FDMC3020DC

FDMC3612General DescriptionN-Channel Power Trench MOSFETThis N-Channel MOSFET is produced using ON Semiconductors advanced Power Trench process that has 100 V, 12 A, 110 mbeen especially tailored to minimize the on-state resistance and Featuresyet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

 9.4. Size:2394K  kexin
 fdmc3612.pdf

FDMC3020DC FDMC3020DC

SMD Type MOSFETN-Channel MOSFETFDMC3612 (KDMC3612)DFN 3X3 FeaturesTop VDS (V) = 100V8 7 6 5 ID = 12A RDS(ON) 110m (VGS = 10V) RDS(ON) 122m (VGS = 6V) Low Profile - 1 mm max in Power 33BottomD D DD1 2 3 4D 5 4 GD 6 3 SD 7 2 SD 8 1 SG S S S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Sour

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