FDMC3020DC datasheet, аналоги, основные параметры

Наименование производителя: FDMC3020DC  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 50 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0063 Ohm

Тип корпуса: POWER33

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Аналог (замена) для FDMC3020DC

- подборⓘ MOSFET транзистора по параметрам

 

FDMC3020DC даташит

 ..1. Size:446K  fairchild semi
 fdmc3020dc.pdf pdf_icon

FDMC3020DC

October 2010 FDMC3020DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 6.25 m at VGS = 10 V, ID = 12 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 9.0 m a

 9.1. Size:253K  1
 fdmc3612.pdf pdf_icon

FDMC3020DC

FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

 9.2. Size:346K  fairchild semi
 fdmc3612.pdf pdf_icon

FDMC3020DC

August 2010 FDMC3612 N-Channel Power Trench MOSFET 100 V, 12 A, 110 m Features General Description Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 122 m at VGS = 6 V, ID = 3.0 A been especially tailored to minimize the on-state resistance and Low Profi

 9.3. Size:253K  onsemi
 fdmc3612.pdf pdf_icon

FDMC3020DC

FDMC3612 General Description N-Channel Power Trench MOSFET This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has 100 V, 12 A, 110 m been especially tailored to minimize the on-state resistance and Features yet maintain superior switching performance. Max rDS(on) = 110 m at VGS = 10 V, ID = 3.3 A Max rDS(on) = 122 m at VGS =

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